Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...

Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy

Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy Toshihiro Asai and David S. Dandy Dept. of Chemical Engineering, Colorado State University, Fort Collins, Colorado 80523-1370 A thermodynamic analysis has been applied to systematically study III-V semiconductor alloy deposition, including nitrides grown by metalorganic vapor phase epitaxy. The predic...

Structure of ordered and disordered InxGa1 xP(001) surfaces prepared by metalorganic vapor phase epitaxy

Ordered and disordered InGaP(001) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(001) appeared indium rich, ...

Structure of arsenic-treated indium phosphide „001... surfaces during metalorganic vapor-phase epitaxy

We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP ~001! film to 10 mTorr of tertiarybutylarsine below 500 °C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick ~2.3–7.5 Å!. The surface of this epilayer remains atomically smooth independent of arsenic e...